Patent 10305472 was granted and assigned to Navitas Semiconductor, Inc. on May, 2019 by the United States Patent and Trademark Office.
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.