Patent attributes
A device includes a vertical semiconductor switch including (i) a gate terminal and a first terminal provided on a substrate and (ii) a second terminal provided on the substrate, where the vertical semiconductor switch is configured to electrically connect or disconnect the first terminal and the second terminal, a first insulative film provided on the substrate, a second insulative film provided on the substrate, where the second insulative film is in contact with the first insulative film and thinner than the first insulative film, and a zener diode formed on the first insulative film and the second insulative film, where the zener diode includes a first portion that is formed on the first insulative film and connected to the first surface of the substrate and a second portion that is formed on the second insulative film and connected to the gate terminal.
