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US Patent 10312661 III-V chip preparation and integration in silicon photonics

Patent 10312661 was granted and assigned to Skorpios Technologies on June, 2019 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Patent Applicant
Skorpios Technologies
Skorpios Technologies
Current Assignee
Skorpios Technologies
Skorpios Technologies
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10312661
Date of Patent
June 4, 2019
Patent Application Number
15592704
Date Filed
May 11, 2017
Patent Citations Received
‌
US Patent 11320592 Process for fabricating a photonic chip via transfer of a die to a receiving substrate
‌
US Patent 11624872 Etched facet in a multi quantum well structure
Patent Primary Examiner
‌
Michelle R. Connelly-Cushua
Patent abstract

A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

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