Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bin Yang0
Gengming Tao0
Xia Li0
Date of Patent
June 11, 2019
0Patent Application Number
155973860
Date Filed
May 17, 2017
0Patent Citations Received
Patent Primary Examiner
0
Patent abstract
A heterojunction bipolar transistor may include an emitter, a base contacting the emitter, a collector contacting the base, a sub-collector contacting the collector, and an electrical isolation layer contacting the sub-collector. The heterojunction bipolar transistor may also include a backside heatsink thermally coupled to the sub-collector and the collector. The backside heatsink may be aligned with a central axis of the emitter and the base.
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