Patent attributes
An RF amplifier includes an amplifier chip on a flange having an input and an output comprising a parasitic capacitance and a parasitic inductance, a first chip capacitor coupled to the output of the output of the amplifier by a first plurality of bond wires, and a second chip capacitor coupled to the first chip capacitor by a second plurality of bond wires, and an output impedance matching network having an input coupled to the output of the second chip capacitor by a third plurality of bond wires, and an output, and a phase shift between the input and the output of less than 90 degrees, wherein the phase shift from the output of the amplifier chip to the output of the output impedance matching network is 180 degrees.