US Patent 10325892 Light emitting device and manufacturing method thereof

A light emitting diode includes a semiconductor structure, a first electrode, a second electrode, and an extending electrode. The semiconductor structure has at least one sidewall and includes a light emitting layer, a first semiconductor layer, and a second semiconductor layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer of the semiconductor structure. The first semiconductor layer is disposed between the light emitting layer and the first electrode. The second electrode is electrically connected to the second semiconductor layer of the semiconductor structure. The second semiconductor layer is disposed between the light emitting layer and the second electrode. The extending electrode is disposed on the sidewall of the semiconductor structure and is electrically connected to the second electrode.