Patent attributes
A semiconductor device includes: an upper-surface electrode on an upper surface of a semiconductor element; a plated layer on an upper surface of the upper-surface electrode; gate runners penetrating the plated layer and formed to extend above the upper surface of the semiconductor element; and a metal connecting plate arranged above the plated layer and electrically connected to the upper-surface electrode, wherein the metal connecting plate has a joint portion parallel to the upper surface of the semiconductor element and has a rising portion at an end of the joint portion, the rising portion extending in a direction away from the semiconductor element, and in a plane parallel to the upper surface of the semiconductor element, a first distance, which is a shortest distance between the rising portion and the gate runner not intersecting the rising portion, is equal to or longer than 1 mm.