Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroshi Matsukizono0
Date of Patent
July 2, 2019
0Patent Application Number
155356840
Date Filed
December 9, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device has a top-gate structure resistant to creation of parasitic capacitance between a low-resistance region formed in a semiconductor layer and a gate electrode. A TFT (100) has a low-resistance region, a portion of which has a first length (L1) ranging from a first position (P1) corresponding to an end of a gate insulating film to a region below a gate electrode (40), and the first length is substantially equal to a second length (L2) ranging from the first position (P1) to a second position (P2) corresponding to an end of the gate electrode (40). Thus, the overlap between the gate electrode (40) and either a source region (20 s) or a drain region (20 d) can be reduced, resulting in diminished parasitic capacitance.
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