US Patent 10340338 Semiconductor device

A semiconductor device according to one embodiment includes a semiconductor substrate having a first surface, an insulating isolation structure having a first depth, and a gate electrode. The semiconductor substrate has source and drain regions, a reverse conductivity region having a second depth, a body region, and a drift region. The source region, the drift region, and the drain region are of a first conductivity type, and the body region and the reverse conductivity region are of a second conductivity type which is opposite to the first conductivity type. The insulating isolation structure is disposed between the drain region and the reverse conductivity region. The first depth is larger than the second depth.