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US Patent 10354716 SRAM based memory structures and methods thereof

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Patent Citations Received
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US Patent 11915787 Integrated circuit device and methods
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Patent abstract

Technologies are generally described herein for static random access memory (SRAM) based memory structures and methods thereof such as multi-bit non-volatile static random-access memory (nvSRAM) with arrayed SRAM and NVM or SRAM buffered one time programmable (OTP) memories, RRAMs or other resistive RAMs.

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Patent Inventor Names
Shu Wang0
Xiaoming Jin0
Zhijiong Luo0
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10354716
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US Patent 11450362 Memory device, integrated circuit device and method
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https://pdfpiw.uspto.gov/.piw?Docid=10354716
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 US Patent 10354716 SRAM based memory structures and methods thereof

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10354716
Date of patent
July 16, 2019
Patent application number
15704006
Date Filed
September 14, 2017
Patent primary examiner
‌
Fernando Hidalgo

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