Patent attributes
An electronic device integration method and integrated electronic device. The integration method may include the steps of preparing a first electronic device by forming an electrically conductive trace overlying a substrate, forming a barrier layer overlying the electrically conductive trace, forming one or more electrically conductive interconnects on the barrier layer, and forming a bonding layer overlying the trace and/or at least partially surrounding the one or more interconnects. The barrier layer is configured to prevent formation of an intermetallic compound between the trace and interconnect structures, while still enabling electrical communication between the trace and interconnect. The integration method may further include the steps of direct bonding the first electronic device to a second electronic device, direct bonding a third electronic device to the second electronic device, and so on. A high-temperature treatment and functional testing of the vertically integrated electronic device may be conducted after each stack sequence.
