Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shih-Wei Wang0
Date of Patent
July 16, 2019
Patent Application Number
15716722
Date Filed
September 27, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A FinFET device includes a fin structure, a gate structure, a gate helmet, a pair of spacers and a contact structure. The fin structure protrudes from a semiconductor substrate. The gate structure crosses over the fin structure. The gate helmet includes a base and a pair of fringes. The base is disposed on a top surface of the gate structure. The pair of fringes is extended upwards from opposite sides of the base. The pair of spacers is positioned on the pair of the fringes. The contact structure is disposed between the pair of the fringes and between the pair of the spacers.
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