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US Patent 10373873 Gate cut in replacement metal gate process

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
March 23, 2018
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Date of Patent
August 6, 2019
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Patent Application Number
15933708
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Patent Citations
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US Patent 10090402 Methods of forming field effect transistors (FETS) with gate cut isolation regions between replacement metal gates
Patent Citations Received
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US Patent 11508582 Cut metal gate processes
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US Patent 11935958 Semiconductor device structure and method for forming the same
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US Patent 11990341 Cut metal gate processes
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US Patent 12027608 Semiconductor structure having dielectric structure extending into second cavity of semiconductor Fin
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Patent Inventor Names
Ruilong Xie
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Kangguo Cheng
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Laertis Economikos
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Chanro Park
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10373873
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Patent Primary Examiner
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Jami Valentine Miller
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