Patent attributes
Methods of manufacturing a pressure sensor are provided. In preferred embodiments, the method comprises: forming a cavity in a first side of a silicon starting material; depositing a layer of a second material over the cavity; removing a first portion of material above the cavity from a second side of the silicon starting material to expose the second material to the second side to form a diaphragm from the second material and wherein, a second portion of material above the cavity that was not removed from the silicon starting material, forms at least one support structure that spans the diaphragm, wherein the second side is opposite to the first side; and forming at least one piezoresistor in the silicon starting material over an intersection of the support structure and the silicon starting material at an outside edge of the diaphragm on the second side.