US Patent 10388343 Magnetoresistive element and magnetic memory

A magnetoresistive element includes: a first magnetic layer having a magnetization direction that is variable; a second magnetic layer having a magnetization direction that is invariable; a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer; a third magnetic layer that fixes the magnetization direction of the second magnetic layer and that antiferromagnetically couples with the second magnetic layer; and a second non-magnetic layer provided between the second magnetic layer and the third magnetic layer. The second non-magnetic layer includes ruthenium (Ru) and a metal element.