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US Patent 10403631 Three-dimensional ferroelectric memory devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
August 13, 2018
Date of Patent
September 3, 2019
Patent Application Number
16102667
Patent Citations
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US Patent 10153018 Ferroelectric memory cells
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US Patent 10049720 Dynamic random access memory (DRAM)
0
Patent Citations Received
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US Patent 12108603 Methods for forming on-chip capacitor structures in semiconductor devices
0
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US Patent 11476262 Methods of forming an array of capacitors
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US Patent 11916149 Doped polar layers and semiconductor device incorporating same
0
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US Patent 11925031 Arrays of capacitors and arrays of memory cells
0
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US Patent 11949018 Doped polar layers and semiconductor device incorporating same
0
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US Patent 11949017 Doped polar layers and semiconductor device incorporating same
0
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US Patent 11956968 Memory device
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US Patent 11469327 Doped polar layers and semiconductor device incorporating same
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US Patent 10763099 Wafer flatness control using backside compensation structure
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US Patent 11289509 Double-gated ferroelectric field-effect transistor
•••
Patent Inventor Names
Qian Tao
0
Yushi Hu
0
Zhenyu Lu
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10403631
Patent Primary Examiner
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Allison Bernstein

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