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US Patent 10410857 Formation of SiN thin films

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
August 24, 2015
Date of Patent
September 10, 2019
Patent Application Number
14834290
Patent Citations Received
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US Patent 11979171 Reduced complexity encoders and related systems, methods, and devices
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US Patent 10580645 Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
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US Patent 11551926 Methods of forming a microelectronic device, and related systems and additional methods
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US Patent 11587783 Si precursors for deposition of SiN at low temperatures
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US Patent 11069522 Si precursors for deposition of SiN at low temperatures
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US Patent 11289327 Si precursors for deposition of SiN at low temperatures
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US Patent 11694890 Substrate processing method and substrate processing apparatus
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US Patent 11784043 Formation of SiN thin films
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US Patent 11367613 Deposition of SiN
Patent Inventor Names
Dai Ishikawa
0
Shang Chen
0
Toshiya Suzuki
0
Viljami J. Pore
0
Kunitoshi Namba
0
Ryoko Yamada
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10410857
Patent Primary Examiner
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Frederick B Hargrove

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