US Patent 10411061 Semiconductor structure and fabrication method thereof

A semiconductor structure and a fabrication method are provided. The fabrication method includes: providing a substrate, containing first doping ions and including a pixel region for forming a pixel structure; forming a deeply doped region, in the photosensitive region of the substrate and containing second doping ions; forming a floating diffusion area in the floating diffusion region of the substrate and containing third doping ions; forming a gate structure on the substrate at the junction of the photosensitive region and the floating diffusion region; forming a sidewall film covering the gate structure and the substrate; forming a sidewall spacer; forming a first doped region in the floating diffusion region on one side of the gate structure; forming a metal connection layer on the first doped region; forming an interlayer dielectric layer on the substrate; and forming a source/drain contact plug in the interlayer dielectric layer.