Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kensuke Yoshizumi0
Shunpei Yamazaki0
Date of Patent
September 17, 2019
0Patent Application Number
160484120
Date Filed
July 30, 2018
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.
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