Patent 10424371 was granted and assigned to Micron Technology on September, 2019 by the United States Patent and Trademark Office.
Methods, a memory device, and a system are disclosed. One such method includes applying a select pulse to a snapback device of a memory cell. This causes the memory cell to enter a conductive state. Once in the conductive state, the memory cell can be set or reset by a pulse formed from parasitic capacitive discharge from various paths coupled to the memory cell.