US Patent 10424374 Programming enhancement in self-selecting memory
Patent 10424374 was granted and assigned to Micron Technology on September, 2019 by the United States Patent and Trademark Office.
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Methods, systems, and devices for programming enhancement in memory cells are described. An asymmetrically shaped memory cell may enhance ion crowding at or near a particular electrode, which may be leveraged for accurately reading a stored value of the memory cell. Programming the memory cell may cause elements within the cell to separate, resulting in ion migration towards a particular electrode. The migration may depend on the polarity of the cell and may create a high resistivity region and low resistivity region within the cell. The memory cell may be sensed by applying a voltage across the cell. The resulting current may then encounter the high resistivity region and low resistivity region, and the orientation of the regions may be representative of a first or a second logic state of the cell.
US Patent 10424374 Programming enhancement in self-selecting memory
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