Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 24, 2019
Patent Application Number
15707749
Date Filed
September 18, 2017
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.