Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kangguo Cheng0
Xin Miao0
Chen Zhang0
Wenyu Xu0
Date of Patent
September 24, 2019
Patent Application Number
15957317
Date Filed
April 19, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of fabricating a semiconductor device includes forming a gate on a nanosheet stack including a first nanosheet and a second nanosheet. The first nanosheet and the second nanosheet each include a dielectric material. The method includes removing a portion of the nanosheet stack in a source/drain region adjacent to the gate to form a trench and depositing a first semiconductor material in the trench. The method further includes removing the second nanosheet from the nanosheet stack to form a channel region gap in the nanosheet stack and depositing a second semiconductor material in the channel region gap to form a channel.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.