Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 1, 2019
Patent Application Number
15890671
Date Filed
February 7, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.
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