Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 8, 2019
Patent Application Number
15461767
Date Filed
March 17, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.
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