US Patent 10446552 Memory element

According to one embodiment, a memory element includes a first conductive layer, a second conductive layer, and a first layer. The first conductive layer includes an ion source. The first layer includes a first element and is provided between the first conductive layer and the second conductive layer. An electronegativity of the first element is greater than 2. The first layer includes a first region and a second region. The first region includes the first element. The second region is provided between the first region and the second conductive layer. The second region does not include the first element, or the second region includes the first element, and a concentration of the first element in the first region is higher than a concentration of the first element in the second region.