Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kangguo Cheng0
Junli Wang0
Veeraraghavan S. Basker0
Theodorus E. Standaert0
Date of Patent
October 22, 2019
0Patent Application Number
160048160
Date Filed
June 11, 2018
0Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
Structures and methods are presented for forming a vertical field effect transistors. The structure generally includes a top source/drain including an L-shaped spacer on sidewalls and a portion of the bottom surface of the top source/drain. At least one airgap top spacer is provided adjacent top sidewalls of the fin and between the top source/drain and the gate electrode.
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