Patent attributes
According to one embodiment, a magnetic memory includes: a memory cell including a first magnetoresistive effect element; a reference circuit including a second magnetoresistive effect element having a first resistance state and a third magnetoresistive effect element having a second resistance state; and a read circuit configured to read data in the memory cell based on a first signal based on an output from the memory cell and a second signal based on an output from the reference circuit. At a time of reading of the data, a first voltage is applied to the first magnetoresistive effect element, and a second voltage higher than the first voltage is applied to the second magnetoresistive effect element and the third magnetoresistive effect element.
