Patent attributes
Systems, methods, and apparatus are provided for tuning a memristive property of a device. The device (500) includes a layer of a dielectric material (507) disposed over and forming an interface with a layer of an electrically conductive material (506), and a gate electrode (508) disposed over the dielectric material. The dielectric material layer includes at least one ionic species (302) having a high ion mobility. The electrically conductive material is configured such that a potential difference applied to the device can cause the at least one ionic species to migrate reversibly across the interface into or out of the electrically conductive material layer, to modify the resistive state of the electrically conductive material layer.