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US Patent 10468500 FinFET fabrication methods
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Is a
Patent
Date Filed
June 29, 2018
Date of Patent
November 5, 2019
Patent Application Number
16024506
Patent Citations Received
US Patent 11855169 Silicide structures in transistors and methods of forming
0
US Patent 11532522 Source/drain EPI structure for improving contact quality
US Patent 11355587 Source/drain EPI structure for device boost
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10468500
Patent Primary Examiner
Thanhha S. Pham
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