Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 5, 2019
Patent Application Number
15986886
Date Filed
May 23, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
Vertical field effect transistor complementary metal oxide semiconductor (VFET CMOS) structures and methods of fabrication include a single mask level for forming the dual source/drains in both the NFET region and the PFET region. The VFET CMOS structures and methods of fabrication further include equal epi-to-channel distances in both the NFET region and PFET regions.
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