Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
I-Wei Yang0
Shu-Yuan Ku0
Ryan Chia-Jen Chen0
Chih-Chang Hung0
Ming-Ching Chang0
Date of Patent
November 5, 2019
0Patent Application Number
159986870
Date Filed
August 15, 2018
0Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device and method of forming thereof includes a first fin and a second fin each extending from a substrate. A first gate segment is disposed over the first fin and a second gate segment is disposed over the second fin. An interlayer dielectric (ILD) layer is adjacent the first gate segment and the second gate segment. A cut region (e.g., opening or gap between first gate structure and the second gate structure) extends between the first and second gate segments. The cut region has a first portion has a first width and a second portion has a second width, the second width is greater than the first width. The second portion interposes the first and second gate segments and the first portion is defined within the ILD layer.
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