US Patent 10475886 Modified fin cut after epitaxial growth
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Patent abstract
A method of forming a gate located above multiple fin regions of a semiconductor device. The method may include removing unwanted fin structures after epitaxially growing junctions.
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Patent Inventor Names
Fee Li Lie0
Raghavasimhan Sreenivasan0
Sivananda K. Kanakasabapathy0
Soon-Cheon Seo0
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US Patent 10475886 Modified fin cut after epitaxial growth
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Is a
Patent jurisdiction
Patent number
10475886
Date of patent
November 12, 2019
Patent application number
14571504
Date Filed
December 16, 2014
Patent primary examiner
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