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US Patent 10475956 Optoelectronic device
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Patent
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Date Filed
December 21, 2015
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Date of Patent
November 12, 2019
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Patent Application Number
14976814
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Patent Citations
US Patent 10128404 Electronic devices comprising N-type and P-type superlattices
Patent Citations Received
US Patent 12125946 Method and epitaxial oxide device with impact ionization
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US Patent 11489090 Epitaxial oxide field effect transistor
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US Patent 11502223 Epitaxial oxide materials, structures, and devices
US Patent 11522087 Epitaxial oxide integrated circuit
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US Patent 11522103 Epitaxial oxide materials, structures, and devices
US Patent 11978824 Buried contact layer for UV emitting device
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US Patent 12087880 Epitaxial oxide materials, structures, and devices
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US Patent 12095006 Epitaxial oxide device with impact ionization
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US Patent 11462658 Impact ionization light-emitting diodes
US Patent 11563144 Advanced electronic device structures using semiconductor structures and superlattices
•••
Patent Inventor Names
Petar Atanackovic
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10475956
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Patent Primary Examiner
Long Pham
0
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