Patent attributes
The present disclosure provides a semiconductor device and a manufacturing method therefor. The device may include: a semiconductor substrate; a fin projecting from the semiconductor substrate, where trenches are formed on sides of the fin; a first insulator layer partially filling the trenches, where the fin protrudes from the first insulator layer; a second insulator layer covering the fin; a plurality of pseudo gate structures on the second insulator layer, where each pseudo gate structure wraps a part of the fin, where each pseudo gate structure includes a pseudo gate located on the second insulator layer, the plurality of pseudo gate structures includes at least a first pseudo gate structure and a second pseudo gate structure that are spaced from each other, the second pseudo gate structure is located at an edge corner of the fin, and a part of the second pseudo gate structure is on the first insulator layer; spacers, on the first insulator layer and the second insulator layer, at two sides of each of the plurality of pseudo gate structures; and a source or a drain located among the plurality of pseudo gate structures. The present invention can improve reliability of the device.
