US Patent 10490738 Resistive switching memory cell

In one aspect, a resistive switching memory device includes a first electrode and a second electrode having interposed therebetween a first inner region and a second inner region, where the first and second inner regions contacting each other. The first inner region includes one or more metal oxide layers and the second inner region consists of a plurality of layers, where each of the layers of the second inner region is an insulating, a semi-insulating or a semiconducting layer. The second inner region comprises one or more layers having a stoichiometric or off-stoichiometric composition of a material selected from the group consisting of SiGex, SiNx, AlOx, MgOx, AINx, HfOx, HfSiOx, ZrOx, ZrSiOx, GdAlOx, DyScOx, TaOx and combinations thereof. The second inner region comprises one or more silicon-containing layers, such that one of the one or more silicon-containing layers contacts the first inner region.