US Patent 10495603 High performance ISFET with ferroelectric material

The present disclosure relates to semiconductor structures and, more particularly, to high performance ion sensitive field effect transistor (ISFET) with ferroelectric material and methods of manufacture. The structure includes: a substrate comprising a doped region; a gate dielectric material over the doped region; a ferroelectric material over the gate dielectric material; and a sensing membrane over the ferroelectric material.