Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Huilong Zhu0
Date of Patent
December 3, 2019
0Patent Application Number
160837440
Date Filed
June 27, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
There are provided a Fin Field Effect Transistor (FinFET), a method of manufacturing the same, and an electronic device including the same. According to embodiments, the FinFET may include a fin formed on a substrate, a gate stack formed on the substrate and intersecting the fin, and a gate spacer formed on sidewalls of the gate stack. The gate spacer may include a dielectric material and a negative capacitance material.
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