Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Koichi Shimazaki0
Date of Patent
December 10, 2019
0Patent Application Number
151933860
Date Filed
June 27, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device has a bonding pad and a wiring layer formed on an insulating film. The wiring layer is spaced from the bonding pad by a gap. A passivation film covers the bonding pad and the wiring layer and fills the gap. The gap has a width equal to or larger than the thickness of the passivation film, and equal to or smaller than twice a side wall thickness of the passivation film covering a side wall of the wiring layer. The semiconductor device has a high resistance to stress during bonding.
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