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US Patent 10510596 Metal gates of transistors having reduced resistivity

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
November 15, 2018
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Date of Patent
December 17, 2019
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
16191908
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Patent Citations
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US Patent 10141225 Metal gates of transistors having reduced resistivity
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US Patent 10079210 Integrated circuit device and method of fabricating the same
Patent Citations Received
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US Patent 12068197 Methods for forming contact plugs with reduced corrosion
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US Patent 10825727 Metal gates of transistors having reduced resistivity
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US Patent 10985061 Methods for forming contact plugs with reduced corrosion
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US Patent 11302818 Gate resistance reduction through low-resistivity conductive layer
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US Patent 11393909 Semiconductor devices inlcluding a fin field effect transistor
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US Patent 11430694 Metal gates of transistors having reduced resistivity
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US Patent 11916146 Gate resistance reduction through low-resistivity conductive layer
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Patent Inventor Names
Li-Te Hsu
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Yi-Wei Chiu
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Chia-Ching Tsai
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10510596
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Patent Primary Examiner
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Kyoung Lee
0

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