Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shi-Ning Ju0
Keng-Chu Lin0
Kuan-Lun Cheng0
Kuo-Cheng Ching0
Chih-Hao Wang0
Date of Patent
December 17, 2019
Patent Application Number
15883684
Date Filed
January 30, 2018
Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device is disclosed that includes a plurality of isolation regions. A fin is arranged between the plurality of isolation regions. One of the plurality of isolation regions includes a first atomic layer deposition (ALD) layer, a second ALD layer, a flowable chemical vapor deposition (FCVD) layer, and a third ALD layer. The first ALD layer includes a first trench. The second ALD layer is formed in the first trench of the first ALD layer. The FCVD layer is formed in the first trench of the first ALD layer and on the second ALD layer. The third ALD layer is formed on the FCVD layer.
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