Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 24, 2019
Patent Application Number
16221850
Date Filed
December 17, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
Semiconductor devices and methods of forming semiconductor devices are disclosed. In some embodiments, a first trench and a second trench are formed in a substrate, and dopants of a first conductivity type are implanted along sidewalls and a bottom of the first trench and the second trench. The first and second trenches are filled with an insulating material, and a gate dielectric and a gate electrode over the substrate, the gate dielectric and the gate electrode extending over the first trench and the second trench. Source/drain regions are formed in the substrate on opposing sides of the gate dielectric and the gate electrode.
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