Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 31, 2019
Patent Application Number
15837530
Date Filed
December 11, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device includes: preparing a substrate; forming an isolation layer defining an active region in the substrate; forming a first insulation structure over the substrate, the first insulation structure defining a line-type opening that exposes the isolation layer and the active region; forming a plug pad through a Selective Epitaxial Growth (SEG) process over the exposed active regions; forming a second insulation structure inside the line-type opening, the second insulation structure defining a contact hole landing on the plug pad; and filling the contact hole with a contact plug.
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