Is a
Patent attributes
Patent Applicant
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jizhong Li0
Anthony J. Lochtefeld0
Date of Patent
December 31, 2019
0Patent Application Number
158351620
Date Filed
December 7, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.
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