US Patent 10522680 Finfet semiconductor device structure with capped source drain structures

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a first fin structure over the base. The semiconductor device structure includes an isolation layer over the base. The first fin structure is partially in the isolation layer. The semiconductor device structure includes a first gate structure over and across the first fin structure. The semiconductor device structure includes a first source structure and a first drain structure on the first fin structure and on two opposite sides of the first gate structure. The first source structure and the first drain structure are made of an N-type conductivity material. The semiconductor device structure includes a cap layer covering the first source structure and the first drain structure. The cap layer is doped with a Group IIIA element.