Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 7, 2020
Patent Application Number
16056551
Date Filed
August 7, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a magnetic tunneling junction (MTJ) on the first IMD layer; forming a liner on the MTJ and the first IMD layer; removing part of the liner to form a spacer adjacent to the MTJ; and forming a second IMD layer on the first IMD layer.
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