Patent attributes
A control device for a power semiconductor switch includes an actuating device, which on a third control device terminal, upon the reception of a switching on command, generates an actuating voltage for the switching on of the power semiconductor switch and, upon the reception of an switching off command, generates an actuating voltage for the switching off of the power semiconductor switch, and a current detection circuit, which generates a first high-current signal if an actuating voltage assumes a voltage value at which the power semiconductor switch is switched on, and a primary voltage of the power semiconductor switch applied between first and second control device terminals exceeds a first power semiconductor switch primary voltage value. The actuating device, upon the reception of an switching off command, generates an actuating voltage for the switching off of the power semiconductor switch, such that the actuating voltage is reduced such that the time interval elapsing between a first actuating voltage value, assumed by the actuating voltage upon the reception of the switching off command, and the achievement of a second actuating voltage value of the actuating voltage, which is equal to 10% of the first actuating voltage value, is greater in the presence of the first high-current signal than in the absence of the first high-current signal.
