Patent attributes
Technology is described herein for performing multiplication using non-volatile memory cells. A multiplicand may be stored a node that includes multiple non-volatile memory cells. A multiplicand is stored a node that includes multiple non-volatile memory cells. Each memory cell in the node is connected to the same bit line, in one aspect. A multiply voltage may be applied to each memory cell in the node. Each memory cell in the node responds to the multiply voltage by passing a memory cell current to a bit line. The multiply voltage(s) are simultaneously applied to each memory cell in the node, such that the memory cell current of each memory cell flows in the bit line. The magnitude of the bit line current represents a product of the multiplier and the multiplicand. Vector/vector multiplication may be performed using “n” nodes of memory cells connected to the same bit line.
