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US Patent 10535654 Cut metal gate with slanted sidewalls

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
February 26, 2018
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Date of Patent
January 14, 2020
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Patent Application Number
15904835
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Patent Citations Received
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US Patent 12020989 Structure for fringing capacitance control
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US Patent 11670681 Method of forming fully strained channels
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US Patent 11349013 IC product comprising a novel insulating gate separation structure for transistor devices
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US Patent 12009266 Structure for fringing capacitance control
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US Patent 11482421 Method of forming a semiconductor device by a replacement gate process
Patent Inventor Names
Ya-Yi Tsai
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Chun-Liang Lai
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Ming-Ching Chang
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Ryan Chia-Jen Chen
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Shu-Yuan Ku
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10535654
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Patent Primary Examiner
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Nelson Garces
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