Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Seje Takaki0
Date of Patent
January 21, 2020
0Patent Application Number
158236280
Date Filed
November 28, 2017
0Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method is provided that includes forming a transistor by forming a gate dielectric layer above a substrate, forming a spacer dielectric layer above the gate dielectric layer, and forming a gate adjacent the gate dielectric layer and above the spacer dielectric layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
